ALD (Atomic Layer Deposition)-Thermal

ALDType: Deposition-CVD

Description: Deposit thin film one layer at a time using cycles of alternating precursors. Deposition rates vary depending on film and temperature but generally are about 1 Å per cycle.

Films: alumina (Al2O3), hafnium oxide (HfO2), silicon dioxide (SiO2), zinc oxide (ZnO), titanium dioxide (TiO2), and zirconium dioxide (ZrO2).

Substrate Compatibility: Varying sizes allowed, from pieces, all the way up to 6 inch wafers.

Location: Keller-Bay 1

Badger Name: K1 ALD Savannah Ultratech

Supplemental Material: SA-ALD Report, ALD Film Characterization

Training: Watch training video and review SOP prior to requesting training.